Hangzhou HANAN Semiconductor Co., Ltd

　　Features: 1. complete diffusion process. 2. Ceramic package 3. Center amplifying gate structure 4. Double sided cooling. 5 Large current and high voltage

　　Typical applications： 1 High power converter 2 AC and DC motor control 3. AC and DC switch 4 Phase control rectifier 5. Active and passive inverter

　　1. I_GTV_GTI_H is 25 DEG C test value., all other parameters is Tjm test value unless otherwise stated.

　　2.I²t=I²_TSM×tw/2;tw= half sine wave current bottom width. Under 50Hz, I²t=0.005I²_TSM(A²s).

　　3.When used in the current 60HZ situation, I_TSM(8.3ms)=I_TSM(10ms)×1.066,T_j=T_jm

　　I²t(8.3ms)=I²t(10ms)×0.943,T_j=T_jm

　　4.V_TO : threshold voltage, r_T Slope resistance

　　5.Gate lead: White or red; The cathode lead: red