Hangzhou Hanan Semiconductor Co . , Ltd

Products>> Power modules >> Non insulated thyristor module

Features	Typical Application	Instruction
1.Non-isolated. Mounting base as common anode or cathode terminal 2.International standard package 3.Pressure contact technology with increased power cycling capability 4.Max junction temperature up to 150¡ãC 5.High surge current	1.Welding Power Supply 2.Various DC power supplies 3.DC supply for PWM inverter

MTC(AA) MTY(AA)

Type	I_T（Av）@T_C		V_DRM/V_RRM	V_TM@I_TM		I_DRM / I_RRM	I_GT	V_GT	I_H	dv/dt	di/dt	I_TSM	I²t	V_TO	R_T	R_jc	T_JM	Outline
Type	A	℃	V	V	A	mA	mA	V	mA	V/μS	A/μS	A×103	A2S×104	v	mΩ	℃/w	℃
MTX60	60	110	200-600	1.35	180	6	100	2.5	150	800	100	2.10	2.24	0.80	2.65	0.420	140	outline
MTX80	80	110	200-600	1.35	240	8	100	2.5	150	800	100	2.70	3.71	0.80	1.59	0.250	140	outline
MTX100	100	110	200-600	1.40	300	8	100	2.5	150	800	100	3.40	5.89	0.80	1.75	0.240	140	outline
MTX130	130	110	200-600	1.40	390	12	150	2.5	200	800	100	4.50	10.30	0.80	1.10	0.200	140	outline
MTX160	160	110	200-600	1.43	480	12	150	2.5	200	800	100	5.60	16.00	0.80	1.15	0.150	140	outline
MTX200	200	110	200-600	1.39	600	15	150	2.5	200	800	100	7.00	25.00	0.80	0.70	0.130	140	outline

MTC MTY

Type	I_T（Av）@T_C		V_DRM/V_RRM	V_TM@I_TM		I_DRM / I_RRM	I_GT	V_GT	I_H	dv/dt	di/dt	I_TSM	I²t	V_TO	R_T	R_jc	T_JM	Outline
Type	A	℃	V	V	A	mA	mA	V	mA	V/μS	A/μS	A×103	A2S×104	v	mΩ	℃/w	℃
MTX50	50	90	800-1800	1.70	150	8	100	2.5	150	800	100	1.60	1.30	0.80	5.41	0.480	125	outline
MTX100	100	90	800-1800	1.67	300	12	100	2.5	150	800	100	3.20	5.22	0.80	2.45	0.250	125	outline
MTX150	150	90	800-1800	1.67	450	12	100	2.5	150	800	100	5.10	13.30	0.80	1.74	0.160	125	outline
MTX200	200	90	800-1800	1.62	600	20	150	2.5	200	800	100	6.50	21.50	0.80	1.15	0.130	125	outline
MTX250	250	90	800-1800	1.65	750	20	150	2.5	200	800	100	8.50	36.80	0.80	1.02	0.100	125	outline
MTX300	300	90	800-1800	1.58	900	25	150	2.5	200	800	100	9.60	47.00	0.80	0.72	0.080	125	outline

Remark:	Type bar MTx representation of MTC (AA), MTY (AA), either of MTG, MTY
Circuit diagram：